Invited Speakers


Glorious future of Ga2O3 and related ultra-wide-band-gap materials

Ekaterine Chikoidze
CNRS, Université Paris-Saclay, France

Ga2O3 epilayers: phase selection, properties and applications

Roberto Fornari
Dept. of Mathematical, Physical and Computer Sciences, University of Parma, Italy

The (r)evolution of metal oxides: from material to device applications

Elvira Fortunato (1)
i3N/CENIMAT, Department of Materials Science, Universidade NOVA de Lisboa, Portugal

(1) Replaced by Daniela Nunes with the talk
Sustainable metal oxide nanostructures for multifunctional applications

2D materials integration with wide bandgap semiconductors

Filippo Giannazzo
CNR-IMM, Catania, Italy

A link between Ga vacancies formation and growth conditions in MOVPE prepared GaN layers

Alice Hospodková
Institute of Physics of the Czech Academy of Sciences, Czech Republic

Realization of Medium-Voltage Vertical GaN PiN Diodes

Robert Kaplar
Sandia National Laboratories, Albuquerque NM, United States of America

Dynamic performance of power GaN devices: role of off-state stress and hot electrons

Matteo Meneghini
Department of Information Engineering, University of Padova, Italy

A Study of AlGaN/GaN HEMT Trapping Effects and Their Impact on RF Power Amplifier Wireless Infrastructure Applications

José Carlos Pedro
Instituto de Telecomunicações, Universidade de Aveiro, Portugal

Micro and NanoLEDs: Epitaxy, Processing, Applications

Andreas Waag (2)
Institute of Semiconductor Technology, Braunschweig University of Technology & Laboratory for Emerging Nanometrology (LENA), Germany

(2) Replaced by Klaas Strempel

Efficient neural interfacing with microsystems: implication for functional rehabilitation

Blaise Yvert
Grenoble Institute of Neuroscience, Inserm and Univ. Grenoble Alpes, France