Invited Speakers

 

	Glorious future of Ga2O3 and related ultra-wide-band-gap materials Ekaterine Chikoidze CNRS, Université Paris-Saclay, France		Ga2O3 epilayers: phase selection, properties and applications Roberto Fornari Dept. of Mathematical, Physical and Computer Sciences, University of Parma, Italy
The (r)evolution of metal oxides: from material to device applications Elvira Fortunato (1) i3N/CENIMAT, Department of Materials Science, Universidade NOVA de Lisboa, Portugal (1) Replaced by Daniela Nunes with the talk Sustainable metal oxide nanostructures for multifunctional applications		2D materials integration with wide bandgap semiconductors Filippo Giannazzo CNR-IMM, Catania, Italy
	A link between Ga vacancies formation and growth conditions in MOVPE prepared GaN layers Alice Hospodková Institute of Physics of the Czech Academy of Sciences, Czech Republic		Realization of Medium-Voltage Vertical GaN PiN Diodes Robert Kaplar Sandia National Laboratories, Albuquerque NM, United States of America
Dynamic performance of power GaN devices: role of off-state stress and hot electrons Matteo Meneghini Department of Information Engineering, University of Padova, Italy		A Study of AlGaN/GaN HEMT Trapping Effects and Their Impact on RF Power Amplifier Wireless Infrastructure Applications José Carlos Pedro Instituto de Telecomunicações, Universidade de Aveiro, Portugal
	Micro and NanoLEDs: Epitaxy, Processing, Applications Andreas Waag (2) Institute of Semiconductor Technology, Braunschweig University of Technology & Laboratory for Emerging Nanometrology (LENA), Germany (2) Replaced by Klaas Strempel		Efficient neural interfacing with microsystems: implication for functional rehabilitation Blaise Yvert Grenoble Institute of Neuroscience, Inserm and Univ. Grenoble Alpes, France